Trench power MOSFET with reduced gate resistance

Details Trench power MOSFET with reduced gate resistance Trench power MOSFET with reduced gate resistance

2004-11-04

2008-05-06

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S424000, C438S212000, C438S296000, C438S589000, C257SE29257, C257SE21419, C257SE21546, C257SE21629, C257SE21622

Reexamination Certificate

active

07368353

ABSTRACT:
A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.

REFERENCES:
patent: 5283201 (1994-02-01), Tsang et al.
patent: 5665619 (1997-09-01), Kwan et al.
patent: 6538280 (2003-03-01), Nakamura
patent: 2004/0185622 (2004-09-01), Williams et al.
patent: 2004/0219752 (2004-11-01), Azam et al.
patent: 2006/0014349 (2006-01-01), Williams et al.

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