Trench memory with monolithic conducting material and...

Details Trench memory with monolithic conducting material and... Trench memory with monolithic conducting material and...

2006-03-07

2009-02-17

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S391000, C257SE21647, C257SE21650

Reexamination Certificate

active

07491604

ABSTRACT:
A trench memory filled with a monolithic conducting material and methods for forming the same are disclosed. The trench memory includes a trench that has only a single, monolithic conducting material within the trench. The method includes forming a trench with a collar in the trench; forming a node dielectric on a sidewall of the trench; and filling the trench with a monolithic conducting material, such as polysilicon.

REFERENCES:
patent: 5770484 (1998-06-01), Kleinhenz
patent: 6310375 (2001-10-01), Schrems
patent: 6326658 (2001-12-01), Tsunashima et al.
patent: 6670235 (2003-12-01), Tews et al.
patent: 6734077 (2004-05-01), Forster et al.
patent: 2004/0031992 (2004-02-01), Davis et al.
patent: 2005/0006686 (2005-01-01), Saida et al.

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