Trench gate power semiconductor device

Details Trench gate power semiconductor device Trench gate power semiconductor device

2011-05-10

2011-05-10

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S365000, C438S185000, C438S585000

Reexamination Certificate

active

07939886

ABSTRACT:
A trench gate power MOSFET (1) includes: an n−-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n−-type epitaxial layer (12); a plurality of trenches (14) formed so as to reach the n−-type epitaxial layer (12) from an upper surface of the p-type body region (20); and gates (18) formed in the trenches (14). In some regions facing the p-type body region (20) in the n−-type epitaxial layer (12), p-type carrier extracting regions (26a, 26b, 26c) are formed. According to the trench gate power MOSFET (1), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions (26a, 26b, 26c) so as to further increase a speed of the switching operation.

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