Trench-gate MOSFET with capacitively depleted drift region

Details Trench-gate MOSFET with capacitively depleted drift region Trench-gate MOSFET with capacitively depleted drift region

2011-07-12

2011-07-12

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29257

Reexamination Certificate

active

07977193

ABSTRACT:
A trench-gate metal oxide semiconductor field-effect transistor includes a field plate that extends into a drift region of the transistor. The field plate is configured to deplete the drift region when the transistor is in the OFF-state. The field plate is formed in a field plate trench. The field plate trench may be formed using a self-aligned etch process. The conductive material of the field plate and gate of the transistor may be deposited in the same deposition process step. The conductive material may be etched thereafter to form the field plate and the gate in the same etch process step.

REFERENCES:
patent: 4914058 (1990-04-01), Blanchard
patent: 7232726 (2007-06-01), Peake et al.

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