Trench gate laterally diffused MOSFET devices and methods...

Details Trench gate laterally diffused MOSFET devices and methods... Trench gate laterally diffused MOSFET devices and methods...

2006-04-25

2006-04-25

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S259000, C438S212000, C257S329000, C257S330000, C257S331000, C257S343000

Reexamination Certificate

active

07033891

ABSTRACT:
A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Such features allow these devices to maintain the advantages of the LDMOS structure (better linearity), thereby increasing the RF power gain. The trench gate LDMOS of the invention also reduces the hot carrier effects when compared to regular LDMOS devices by reducing the peak electric field and impact ionization. Thus, the devices of the invention will have a better breakdown capability.

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