Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29201
Reexamination Certificate
active
07923776
ABSTRACT:
A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
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Calafut Daniel
Dolny Gary M.
Grebs Thomas E.
Kocon Christopher Boguslaw
Kraft Nathan L.
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
Pham Thanhha
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