Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-28
2009-06-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S271000, C438S524000, C438S526000, C438S527000, C438S589000, C257SE29262, C257SE21629
Reexamination Certificate
active
07544571
ABSTRACT:
A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. A gate electrode recessed in each trench is formed. Using a first mask, a body region of a second conductivity type is formed in the semiconductor region by implanting dopants. Using the first mask, source regions of the first conductivity type are formed in the body region by implanting dopants.
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Fairchild Semiconductor Corporation
Fourson George
Townsend and Townsend / and Crew LLP
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