Trench device structure and fabrication

Details Trench device structure and fabrication Trench device structure and fabrication

2011-08-02

2011-08-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000, C257SE21135, C257SE21144

Reexamination Certificate

active

07989293

ABSTRACT:
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.

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