Trench capacitors with buried isolation layer formed by an...

Details Trench capacitors with buried isolation layer formed by an... Trench capacitors with buried isolation layer formed by an...

2008-01-22

2008-01-22

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S245000, C438S386000, C438S387000, C438S388000, C257SE29346

Reexamination Certificate

active

11125676

ABSTRACT:
A method for forming a trench capacitor includes: removing a portion of the substrate to form a trench within the substrate; forming at a buried isolation layer within the substrate; forming in the substrate a first electrode of the trench capacitor at least in areas surrounding a lower portion of the trench; forming a dielectric layer of the trench capacitor; and forming a second electrode of the trench capacitor in the trench. The buried isolation layer intersects with the trench and has one or more gaps for providing body contact between a first substrate area above the buried isolation layer and a second substrate area below the buried isolation layer.

REFERENCES:
patent: 5508219 (1996-04-01), Bronner et al.
patent: 5770484 (1998-06-01), Kleinhenz
patent: 2005/0093044 (2005-05-01), Cheng et al.
patent: 2006/0105519 (2006-05-01), Davis et al.

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