Trench capacitor vertical structure

Details Trench capacitor vertical structure Trench capacitor vertical structure

2006-04-04

2006-04-04

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000

Reexamination Certificate

active

07023041

ABSTRACT:
A versatile structure is formed, based on a deep trench, vertical transistor DRAM cell, that forms a conductive extension of the trench electrode in an elongated trench that contacts the lower electrode of the vertical transistor. The structure can be used as a capacitor, as a discrete transistor as a single-transistor amplifier or as a building block for more complex circuits.

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