Trench capacitor and method for preparing the same

Details Trench capacitor and method for preparing the same Trench capacitor and method for preparing the same

2006-08-29

2006-08-29

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000, C438S245000, C438S246000, C438S247000, C438S248000, C438S249000, C438S250000, C257S296000, C257S297000, C257S298000, C257S299000

Reexamination Certificate

active

07098100

ABSTRACT:
The present invention discloses a trench capacitor formed in a trench in a semiconductor substrate. The trench capacitor comprises a bottom electrode positioned on a lower outer surface of the trench, a dielectric layer positioned on an inner surface of the bottom electrode, a top electrode positioned on the dielectric layer, a collar oxide layer positioned on an upper inner surface of the trench, a buried conductive strap positioned on the top electrode, and an interface layer made of silicon nitride positioned at the side of the buried conductive strap. The bottom electrode, the dielectric layer and the top electrode form a capacitive structure. The collar oxide layer includes a first block and a second block, and the height of the first block is larger than the height of the second block. The interface layer is positioned on a portion of the inner surface of the trench above the second block.

REFERENCES:
patent: 5525531 (1996-06-01), Bronner et al.
patent: 5736760 (1998-04-01), Hieda et al.
patent: 5945704 (1999-08-01), Schrems et al.
patent: 6489646 (2002-12-01), Jang
patent: 2005/0167721 (2005-08-01), Lin et al.

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