Trench capacitor and a method for manufacturing the same

Details Trench capacitor and a method for manufacturing the same Trench capacitor and a method for manufacturing the same

2006-10-10

2006-10-10

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S239000, C438S246000, C438S386000, C438S389000, C438S238000, C257S301000, C257S303000, C257S304000, C257SE21551

Reexamination Certificate

active

07118956

ABSTRACT:
A trench capacitor comprises a semiconductor substrate, a trench, formed in the semiconductor substrate, having upper and lower portions, a first doped polysilicon layer filled in the lower portion through a first dielectric film and doped with a first impurity having a first conductivity type, at least a second doped polysilicon layer filled in the upper portion through a second dielectric film and doped with a second impurity different from the first impurity, the second impurity having the first conductivity type, and a buried strap layer provided on the second doped polysilicon layer and composed of the first doped polysilicon layer.

REFERENCES:
patent: 5905279 (1999-05-01), Nitayama et al.
patent: 6117726 (2000-09-01), Tsai et al.
patent: 6200873 (2001-03-01), Schrems et al.
patent: 6236079 (2001-05-01), Nitayama et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6700150 (2004-03-01), Wu
patent: 63-79370 (1988-04-01), None
patent: 2000-200887 (2000-07-01), None
patent: 2001-196555 (2001-07-01), None
Japanese Patent Office Notice of Reasons for Rejecion and English translation thereof.

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