Trench and a trench capacitor and method for forming the same

Details Trench and a trench capacitor and method for forming the same Trench and a trench capacitor and method for forming the same

2005-04-15

2008-08-12

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S387000, C438S388000, C257SE27092, C257SE21090, C257SE21461

Reexamination Certificate

active

07410864

ABSTRACT:
A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. This step is performed in such a way that the topmost layer provided on the trench wall is constructed from a sealing material. A selective epitaxy method is carried out in such a way that a monocrystalline semiconductor layer is formed on the surface of the semiconductor substrate and preferably no semiconductor material grows directly on the sealing material. A partial trench is etched in a surface of the epitaxially grown semiconductor layer. This step is performed in such a way that at least part of the layer made of the sealing material is uncovered. An uncovered part of the layer made of the sealing material is then removed.

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