Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-07
2006-11-07
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S630000, C438S664000
Reexamination Certificate
active
07132365
ABSTRACT:
A method of preparing a die comprises treating exposed silicon to form an oxide prior to silicide formation; and depositing metal on the oxide. The metal may comprise titanium, cobalt, nickel, platinum, palladium, tungsten, molybdenum, or combinations thereof on the oxide. The oxide may be less than or equal to about 15 angstroms thick. In various embodiments, treating exposed silicon to form an oxide comprises forming a non-thermal oxide. Treating exposed silicon to form an oxide may also comprise treating the exposed silicon with an oxidizing plasma; alternatively, treating exposed silicon to form an oxide may comprise forming a chemical oxide. In certain other embodiments, treating exposed silicon to form an oxide comprises treating exposed silicon with a solution comprising ammonium hydroxide, hydrogen peroxide, and water; hydrochloric acid, hydrogen peroxide, and water; hydrogen peroxide; ozone; ozonated deionized water; or combinations thereof.
REFERENCES:
patent: 4708904 (1987-11-01), Shimizu et al.
patent: 5451546 (1995-09-01), Grubisich et al.
patent: 5665647 (1997-09-01), Ishigami
patent: 5926737 (1999-07-01), Ameen et al.
patent: 6677234 (2004-01-01), Guelen et al.
patent: 6737716 (2004-05-01), Matsuo et al.
patent: 2002/0175413 (2002-11-01), Lanzerotti et al.
Chen Peijun J.
Crank Sue Ellen
Hurd Trace Quentin
Riley Deborah J.
Siddiqui Shirin
Brady III W. James
Dang Phuc T.
McLarty Peter K.
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