Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-01-30
2007-01-30
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S686000, C257S777000, C438S108000
Reexamination Certificate
active
10341610
ABSTRACT:
Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor die with ozone, in a gas mixture or in a mixture with water provides rapid oxidation of the silicon layer at the back of the semiconductor die to a silicon dioxide layer of at least 10 angstroms thick, which is sufficient to greatly improve bonding to the adhesive. The formation of a silicon dioxide surface layer prior to application of the adhesive is particularly beneficial when combined with rapid, snap curing processes, where the adhesive can be reliably cured by heating the semiconductor die for less than about 1 minute.
REFERENCES:
patent: 3654000 (1972-04-01), Totah et al.
patent: 3849948 (1974-11-01), Youmans et al.
patent: 4143385 (1979-03-01), Miyoshi et al.
patent: 4570330 (1986-02-01), Cogan
patent: 4749640 (1988-06-01), Tremont et al.
patent: 4872047 (1989-10-01), Fister et al.
patent: 4888625 (1989-12-01), Mueller
patent: 4904610 (1990-02-01), Shyr
patent: 5268254 (1993-12-01), Ueno et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5403630 (1995-04-01), Matsui et al.
patent: 5451544 (1995-09-01), Gould
patent: 5597766 (1997-01-01), Neppl
patent: 5650363 (1997-07-01), Endroes et al.
patent: 5668056 (1997-09-01), Wu et al.
patent: 5716862 (1998-02-01), Ahmad et al.
patent: 5820679 (1998-10-01), Yokoyama et al.
patent: 5863970 (1999-01-01), Ghoshal et al.
patent: 5976199 (1999-11-01), Wu et al.
patent: 6028773 (2000-02-01), Hundt
patent: 6034195 (2000-03-01), Dershem et al.
patent: 6036173 (2000-03-01), Neu et al.
patent: 6065489 (2000-05-01), Matsuwaka
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6184064 (2001-02-01), Jiang et al.
patent: 6187216 (2001-02-01), Dryer et al.
patent: 6255230 (2001-07-01), Ikakura et al.
patent: 6255741 (2001-07-01), Yoshihara et al.
patent: 6294469 (2001-09-01), Kulkarni et al.
patent: 6313010 (2001-11-01), Nag et al.
patent: 6313521 (2001-11-01), Baba
patent: 6323140 (2001-11-01), Mayusumi et al.
patent: 6368988 (2002-04-01), Li et al.
patent: 6376335 (2002-04-01), Zhang et al.
patent: 6414374 (2002-07-01), Farnworth et al.
patent: 6451660 (2002-09-01), Ma et al.
patent: 6500694 (2002-12-01), Enquist
patent: 6524968 (2003-02-01), Takahashi et al.
patent: 6551676 (2003-04-01), Yamakawa et al.
patent: 6569709 (2003-05-01), Derderian
patent: 6607946 (2003-08-01), Sandhu et al.
patent: 6608259 (2003-08-01), Norskov
patent: 6635144 (2003-10-01), Cui et al.
patent: 2001/0052652 (2001-12-01), Smith et al.
patent: 2001/0055888 (2001-12-01), Madan et al.
patent: 2002/0000239 (2002-01-01), Sachdev et al.
patent: 2002/0182294 (2002-12-01), Allen et al.
patent: 2003/0000619 (2003-01-01), Nakamura et al.
patent: 2003/0008523 (2003-01-01), Takahashi et al.
patent: 2003/0071340 (2003-04-01), Derderian
patent: 019947607 (2001-04-01), None
patent: 56-56660 (1981-05-01), None
patent: 357124983 (1982-08-01), None
patent: 60-176242 (1985-10-01), None
patent: 61-137354 (1986-06-01), None
patent: 362243332 (1987-10-01), None
patent: 63041028 (1988-02-01), None
patent: 05160304 (1993-06-01), None
patent: 09251995 (1997-09-01), None
patent: 10178000 (1998-06-01), None
Connell Mike
Hollingshead Curtis
Jiang Tongbi
Li Li
Dorsey & Whitney LLP
Jr. Carl Whitehead
Micro)n Technology, Inc.
Mitchell James M.
LandOfFree
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