Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-12
2009-11-03
Rose, Kiesha L (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S183000, C438S199000, C438S229000, C438S655000, C438S656000, C438S657000, C257SE21051, C257SE21203, C257SE21204
Reexamination Certificate
active
07611943
ABSTRACT:
A process (200) for making integrated circuits with a gate, uses a doped precursor (124, 126N and/or126P) on barrier material (118) on gate dielectric (116). The process (200) involves totally consuming (271) the doped precursor (124, 126N and/or126P) thereby driving dopants (126N and/or126P) from the doped precursor (124) into the barrier material (118). An integrated circuit has a gate dielectric (116), a doped metallic barrier material (118, 126N and/or126P) on the gate dielectric (116), and metal silicide (180) on the metallic barrier material (118). Other integrated circuits, transistors, systems and processes of manufacture are disclosed.
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Brady III Wade J.
Rose Kiesha L
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Yang Minchul
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