Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-22
2005-03-22
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S279000, C438S270000
Reexamination Certificate
active
06869851
ABSTRACT:
A method of forming two regions having differing depths using a single implantation process is provided. A mask having two openings associated therewith is formed over a semiconductor body, wherein one of the openings has a size larger than an implantation design rule, and the other opening has a size smaller than the design rule. An implant is performed into the semiconductor body through the implant mask, resulting in two distinct doped regions, wherein the region associated with the larger opening has more dopant than the region associated with the smaller opening. Subsequent activation and thermal processing results in the one region diffusing a greater amount than the second region, thereby resulting in two regions formed concurrently having different depths.
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Haynie Sheldon
Smith Jeff
Springer Lily
Trogolo Joe R.
Brady III Wade James
Lindsay Jr. Walter L.
Niebling John F.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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