Transistor with ultra short length defined partially by sidewall

Details Transistor with ultra short length defined partially by sidewall Transistor with ultra short length defined partially by sidewall

1998-04-30

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438304, 438265, 438286, 257344, H01L 21265

Patent

active

059899670

ABSTRACT:
An integrated circuit fabrication process is provided for forming a transistor having an ultra short channel length. A mask is formed, from a material resistant to oxidation, upon a conductive gate layer and portions of the conductive gate layer are oxidized to form a gate conductor laterally disposed between a pair of oxide regions. As a result, the gate conductor has an ultra narrow lateral dimension. Source and drain impurity areas are formed self-aligned with sidewall surfaces of the oxide regions. In an embodiment, the oxide regions are removed and lightly doped drain regions are formed self-aligned with sidewall surfaces of the gate conductor. Following LDD formation, the mask is removed, spacers are formed laterally adjacent the gate conductor sidewall surfaces, and a metal silicide is formed upon upper surfaces of the gate conductor and the source and drain impurity areas. In an alternative embodiment, following formation of the source and drain impurity areas, the mask is removed and the oxide regions are etched to form sidewall spacers adjacent the gate conductor. Lightly doped drain implant areas are then formed self-aligned to sidewall surfaces of the gate conductor, and a metal silicide is formed upon upper surfaces of the gate conductor and the source and drain impurity areas.

REFERENCES:
patent: 5472895 (1995-12-01), Park
patent: 5578509 (1996-11-01), Fujita
patent: 5672531 (1997-09-01), Gardner et al.
patent: 5693546 (1997-12-01), Nam et al.
patent: 5710450 (1998-01-01), Chau et al.
patent: 5783473 (1998-06-01), Sung
Stanley Wolf Silicon Processing for the VSLI Era vol. I Lattice Press pp. 182,191,192, 1986.

Affiliated with

Also associated with

Rating

Transistor with ultra short length defined partially by sidewall does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with ultra short length defined partially by sidewall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with ultra short length defined partially by sidewall will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1221181