Transistor with reduced short channel effects and method

Details Transistor with reduced short channel effects and method Transistor with reduced short channel effects and method

2011-06-28

2011-06-28

Sandvik, Benjamin P (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

07968415

ABSTRACT:
A method of fabricating a transistor (10) comprises forming source and drain regions (46) and (47) using a first sidewall (42) and (43) as a mask and forming a deep blanket source and drain regions (54) and (56) using a second sidewall (50) and (51) as a mask, the second sidewall (50) and (51) comprising at least part of the first sidewall (42) and (43).

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