Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-04-24
2007-04-24
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257SE21011
Reexamination Certificate
active
10897351
ABSTRACT:
A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regions to be implanted in a substrate and thermally processed without creating excessive overlap capacitance with the gate electrode. The reduction of overlap capacitance increases the operating performance of the transistor, including drive current.
REFERENCES:
patent: 4712291 (1987-12-01), McLevige
patent: 4923827 (1990-05-01), Calviello et al.
patent: 4929567 (1990-05-01), Park et al.
patent: 5089863 (1992-02-01), Satoh et al.
patent: 5472564 (1995-12-01), Nakamura et al.
patent: 5834817 (1998-11-01), Satoh et al.
patent: 5937299 (1999-08-01), Michael et al.
patent: 5981383 (1999-11-01), Lur et al.
patent: 6010954 (2000-01-01), Ho et al.
patent: 6015746 (2000-01-01), Yeh et al.
patent: 6037200 (2000-03-01), Uda et al.
patent: 54013711 (1979-02-01), None
patent: 63197646 (1988-08-01), None
Chu Charles
Letson Thomas A.
Blakely , Sokoloff, Taylor & Zafman LLP
Geyer Scott B.
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