Transistor with notched gate

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C257SE21011

Reexamination Certificate

active

10897351

ABSTRACT:
A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regions to be implanted in a substrate and thermally processed without creating excessive overlap capacitance with the gate electrode. The reduction of overlap capacitance increases the operating performance of the transistor, including drive current.

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patent: 54013711 (1979-02-01), None
patent: 63197646 (1988-08-01), None

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