Semiconductor device and manufacturing method of...

Details Semiconductor device and manufacturing method of... Semiconductor device and manufacturing method of...

2007-04-03

2007-04-03

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000, C438S275000

Reexamination Certificate

active

10991485

ABSTRACT:
Dummy gate patterns111, 112are formed on a silicon active layer103of an SOI substrate, and thereafter, these dummy gate patterns111, 112are removed to form gate grooves130, 132.A threshold voltage of each transistor is adjusted by etching a silicon active layer103in any one of these gate, grooves130, 132to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.

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Office Action issued by Chinese Patent Office, dated Aug. 6, 2004, in Chinese Application No. 03121578.6 and English-language translation thereof.

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