Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-30
2009-02-24
Nguyen, Dao H. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S019000, C257S368000, C257SE21223, C257SE21232, C438S187000, C438S733000
Reexamination Certificate
active
07494858
ABSTRACT:
Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
REFERENCES:
patent: 2005/0009250 (2005-01-01), Wonju et al.
patent: 2005/0285203 (2005-12-01), Fukutome et al.
patent: 2006/0138398 (2006-06-01), Shimamune et al.
patent: 1 538 650 (1979-01-01), None
patent: WO 2005/0141288 (2005-05-01), None
patent: PCT/US2006/025958 (2006-06-01), None
Osamu Tabata, “pH-Controlled TMAH Etchants for Silicon Micromachining,” Transducers '95, EUROSENSORS IX pp. 83-86, Jun. 25-29, 1995.
Tellier, C.R. et al., “Characterization of the Anisotropic Chemical Attack of (HHL) Silicon Plates in a TMAH 25 Weight % Solution: Micromachining and Adequacy of the Dissolution Slowness Surface”, Sensors and Actuators A, Elsevier Sequoia S.A., Lausanne, CH, vol. 105, No. 1, Jun. 15, 2003, pp. 62-75, XP004427479.
Bohr Mark T.
Keating Steven J.
Letson Thomas A.
Murthy Anand S.
O'Neill Donald W.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nguyen Dao H.
LandOfFree
Transistor with improved tip profile and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor with improved tip profile and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with improved tip profile and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4095202