Transistor with immersed contacts and methods of forming...

Details Transistor with immersed contacts and methods of forming... Transistor with immersed contacts and methods of forming...

2011-06-28

2011-06-28

Graybill, David E (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07968394

ABSTRACT:
A method includes forming a semiconductor structure, the semiconductor structure includes a first current electrode region, a second current electrode region, and a channel region, the channel region is located between the first current electrode region and the second current electrode region, wherein the channel region is located in a fin structure of the semiconductor structure, wherein a carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. The method further includes forming a first contact, wherein forming the first contact includes removing a first portion of the semiconductor structure to form an opening, wherein the opening is in the first current electrode region and forming contact material in the opening.

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