Transistor with group III/VI emitter

Details Transistor with group III/VI emitter Transistor with group III/VI emitter

2006-01-10

2006-01-10

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S235000, C438S309000, C438S312000

Reexamination Certificate

active

06984554

ABSTRACT:
A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.

REFERENCES:
patent: 4329625 (1982-05-01), Nishizawa et al.
patent: 5059546 (1991-10-01), Havemann
patent: 6207976 (2001-03-01), Takahashi et al.

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