Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-09-02
2011-12-06
Gurley, Lynne (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C438S301000, C438S429000, C438S430000, C438S700000, C438S702000, C438S703000, C438S689000, C438S042000, C438S043000, C257S019000, C257S622000, C257SE21092, C257SE21102, C257SE21115, C257SE21127, C257SE21131, C257SE21132, C257SE21218, C257SE21385, C257SE21431
Reexamination Certificate
active
08071442
ABSTRACT:
A strain-inducing semiconductor alloy may be formed on the basis of cavities which may have a non-rectangular shape, which may be maintained even during corresponding high temperature treatments by providing an appropriate protection layer, such as a silicon dioxide material. Consequently, a lateral offset of the strain-inducing semiconductor material may be reduced, while nevertheless providing a sufficient thickness of corresponding offset spacers during the cavity etch process, thereby preserving gate electrode integrity. For instance, P-channel transistors may have a silicon/germanium alloy with a hexagonal shape, thereby significantly enhancing the overall strain transfer efficiency.
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Kronholz Stephan
Lenski Markus
Ott Andreas
Wei Andy
Advanced Micro Devices , Inc.
Gurley Lynne
Li Meiya
Williams Morgan & Amerson P.C.
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