Transistor structure with thick recessed source/drain...

Details Transistor structure with thick recessed source/drain... Transistor structure with thick recessed source/drain...

2006-11-07

2006-11-07

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S269000, C438S591000

Reexamination Certificate

active

07132339

ABSTRACT:
An improved transistor structure that decreases source/drain (S/D) resistance without increasing gate-to-S/D capacitance, thereby increasing device operation. S/D structures are formed into recesses formed on a semiconductor wafer through a semiconductor layer and a first layer of a buried insulator having at least two layers. A body is formed from the semiconductor layer situated between the recesses, and the body comprises a top body surface and a bottom body surface that define a body thickness. Top portions of the S/D structures are within and abut the body thickness. An improved method for forming the improved transistor structure is also described and comprises: forming recesses through a semiconductor layer and a first layer of a buried insulator so that a body is situated between the recesses; and forming S/D structures into the recesses so that top portions of the S/D structures are within and abut a body thickness.

REFERENCES:
patent: 3332137 (1967-07-01), Kenney
patent: 4403396 (1983-09-01), Stein
patent: 5047356 (1991-09-01), Li et al.
patent: 5116771 (1992-05-01), Karulkar
patent: 5140390 (1992-08-01), Li et al.
patent: 5208472 (1993-05-01), Su et al.
patent: 5374329 (1994-12-01), Miyawaki
patent: 5418391 (1995-05-01), Huang
patent: 5426315 (1995-06-01), Pfiester
patent: 5449932 (1995-09-01), Fujii
patent: 5494837 (1996-02-01), Subramanian et al.
patent: 5539228 (1996-07-01), Chi
patent: 5571738 (1996-11-01), Krivokapic
patent: 5705840 (1998-01-01), Shen et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5798291 (1998-08-01), Lee et al.
patent: 5828103 (1998-10-01), Hsu
patent: 5880499 (1999-03-01), Oyama
patent: 5994747 (1999-11-01), Wu
patent: 6045625 (2000-04-01), Houston
patent: 6066532 (2000-05-01), Chen et al.
patent: 6121077 (2000-09-01), Hu et al.
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6225173 (2001-05-01), Yu
patent: 6274913 (2001-08-01), Brigham et al.
patent: 6420218 (2002-07-01), Yu
patent: 19910100837 (1991-08-01), None
patent: 19880157923 (1990-01-01), None
patent: 19880285130 (1990-05-01), None
patent: 19890027999 (1990-08-01), None
patent: 19900195813 (1992-03-01), None
patent: 19910325834 (1993-06-01), None
patent: 19940030832 (1995-08-01), None
patent: 19950221758 (1997-03-01), None
IBM Technical Disclosure Bulletin, vol. 25, No. 8, Jan. 1983, pp. 4065-4066, Recessed Source and Drain Gallium Arsenide MESFET, T. L. Andrade.

Affiliated with

Also associated with

Rating

Transistor structure with thick recessed source/drain... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor structure with thick recessed source/drain..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor structure with thick recessed source/drain... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3632532