Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2009-08-25
Garber, Charles D. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29112, C257SE29260
Reexamination Certificate
active
07579656
ABSTRACT:
A transistor for a semiconductor device may include a lower semiconductor layer, an active pattern, including a groove region, on the lower semiconductor layer, a gate pattern at least partially overlapping the active pattern including the groove region, and a gate insulating layer interposed between the active pattern and the gate pattern, wherein a bottom surface of the groove region may be lower than a top surface of the active pattern and higher than a lower surface of the active pattern.
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Kang Tae-Woong
Lee Hae-Wang
Garber Charles D.
Isaac Stanetta D
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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