Transistor structure for semiconductor device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257SE29112, C257SE29260

Reexamination Certificate

active

07579656

ABSTRACT:
A transistor for a semiconductor device may include a lower semiconductor layer, an active pattern, including a groove region, on the lower semiconductor layer, a gate pattern at least partially overlapping the active pattern including the groove region, and a gate insulating layer interposed between the active pattern and the gate pattern, wherein a bottom surface of the groove region may be lower than a top surface of the active pattern and higher than a lower surface of the active pattern.

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patent: 6475890 (2002-11-01), Yu
patent: 6509234 (2003-01-01), Krivokapic
patent: 7285466 (2007-10-01), Kim et al.
patent: 2005/0040444 (2005-02-01), Cohen
patent: 2005/0040462 (2005-02-01), Koh
patent: 2006/0183286 (2006-08-01), Lee
patent: 2008/0251857 (2008-10-01), Brown
patent: 06-209109 (1994-07-01), None
patent: 10-2005-0015975 (2005-02-01), None
patent: 10-2005-0020625 (2005-03-01), None
patent: 10-2005-0035712 (2005-04-01), None

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