Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-09
1999-05-18
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438300, 438303, H01L21/336
Patent
active
059045167
ABSTRACT:
A transistor including an insulating file, a gate, and a source/drain all formed on a semiconductor substrate, wherein the gate overlaps at an edge thereof with the source/drain disposed below the gate, whereby the transistor has a structure capable of avoiding a direct contact between the metal wiring and the source/drain. The gate is formed after a formation of the source/drain.
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Hyundai Electronics Industries Co,. Ltd.
Lattin Christopher
Niebling John F.
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