Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S353000
Reexamination Certificate
active
06902971
ABSTRACT:
A semiconductor fabrication process and the resulting integrated circuit include forming a gate electrode (116) over a gate dielectric (104) over a semiconductor substrate (102). A spacer film (124) exhibiting a tensile stress characteristic is deposited over the gate electrode (116). The stress characteristics of at least a portion of the spacer film is then modulated (132, 192) and the spacer film (124) is etched to form sidewall spacers (160, 162) on the gate electrode sidewalls. The spacer film (124) is an LPCVD silicon nitride in one embodiment. Modulating (132) the spacer film (124) includes implanting Xenon or Germanium into the spacers (160) at an implant energy sufficient to break at least some of the silicon nitride bonds. The modulation implant (132) may be performed selectively or non-selectively either before or after etching the spacer film (124).
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Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; Lattice Press, 1986, p. 192.
Fourson George
Freescale Semiconductor Inc.
Lally Joseph P.
Toledo Fernando L.
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