Transistor of the I-MOS type comprising two independent...

Details Transistor of the I-MOS type comprising two independent... Transistor of the I-MOS type comprising two independent...

2006-12-01

2010-06-08

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C438S305000, C438S586000, C438S595000, C257SE21417, C257SE21435, C257SE27132, C257SE27133, C257SE29151, C257SE29152, C257SE29255, C257SE29256, C257SE29257

Reexamination Certificate

active

07732282

ABSTRACT:
The transistor comprises a source and a drain separated by a lightly doped intermediate zone. The intermediate zone forms first and second junctions respectively with the source and with the drain. The transistor comprises a first gate to generate an electric field in the intermediate zone, on the same side as the first junction, and a second gate to generate an electric field in the intermediate zone, on the same side as the second junction.

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Gopalakrishnan et al., “Impact Ionization MOS (I-MOS)—Part II: Experimental Results,”IEEE Transactions on Electron Devices, vol. 52, No. 1, Jan. 2005, pp. 77-84.
Choi et al., “80nm Self-Aligned Complementary I-MOS Using Double Sidewall Spacer and Elevated Drain Structure and Its Applicability to Amplifiers with High Linearity,”International Electron Devices Meeting, Dec. 13-15, 2004, pp. 203-206.

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