Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S278000, C438S276000, C257S315000, C257SE21409, C257SE21209
Reexamination Certificate
active
11615812
ABSTRACT:
A transistor which may effectively control the short channel effect with a vertical transistor structure. This structure may prevent the degradation of a transistor's performance caused by the hot carrier effect. The transistor has a source region having a concentration of implanted impurity ions on a semiconductor substrate; a channel region having a cylindrical shape over the source region; a drain region formed over the channel region; a gate insulation layer formed over the source region, a side of the channel region, and the drain region; and a gate conductor extending over an upper portion and one side of the channel region.
REFERENCES:
patent: 6265274 (2001-07-01), Huang et al.
patent: 6709921 (2004-03-01), Yeh et al.
patent: 7244676 (2007-07-01), Lee
patent: 2002/0168822 (2002-11-01), Yang et al.
patent: 2004/0126951 (2004-07-01), Lee
Ahmadi Mohsen
Dongbu Hitek Co., Ltd.
Sherr & Nourse, PLLC
LandOfFree
Transistor of semiconductor device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor of semiconductor device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor of semiconductor device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3957072