Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S278000, C438S276000, C257S315000, C257SE21409, C257SE21209
Reexamination Certificate
active
07396727
ABSTRACT:
A transistor which may effectively control the short channel effect with a vertical transistor structure. This structure may prevent the degradation of a transistor's performance caused by the hot carrier effect. The transistor has a source region having a concentration of implanted impurity ions on a semiconductor substrate; a channel region having a cylindrical shape over the source region; a drain region formed over the channel region; a gate insulation layer formed over the source region, a side of the channel region, and the drain region; and a gate conductor extending over an upper portion and one side of the channel region.
REFERENCES:
patent: 6265274 (2001-07-01), Huang et al.
patent: 6709921 (2004-03-01), Yeh et al.
patent: 7244676 (2007-07-01), Lee
patent: 2002/0168822 (2002-11-01), Yang et al.
patent: 2004/0126951 (2004-07-01), Lee
Ahmadi Mohsen
Dongbu Hi-Tek Co., Ltd.
Lebentritt Michael S.
Sherr & Nourse, PLLC
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