Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-13
2009-12-22
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S333000, C257SE29257, C257SE29260
Reexamination Certificate
active
07635893
ABSTRACT:
A transistor, memory cell array and method of manufacturing a transistor are disclosed. In one embodiment, the invention refers to a transistor, which is formed at least partially in a semiconductor substrate, comprising a first and a second source/drain regions, a channel region connecting said first and second source/drain regions, said channel region being disposed in said semiconductor substrate, and a gate electrode disposed along said channel region and being electrically insulated from said channel region, for controlling an electrical current flowing between said first and second source/drain regions, wherein said channel region comprises a fin-region in which the channel has the shape of a ridge, said ridge comprising a top side and two lateral sides in a cross section perpendicular to a line connecting said first and second source/drain regions, wherein said top side is disposed beneath a surface of said semiconductor substrate and said gate electrode is disposed along said top side and said two lateral sides.
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Schloesser Till
von Schwerin Ulrike Gruening
Weis Rolf
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Taylor Earl N
Vu David
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