Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S060000, C257S069000, C257SE27011, C257SE27029, C257SE27061
Reexamination Certificate
active
07989899
ABSTRACT:
A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.
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Kim Sun-il
Park Young-soo
Song I-hun
Yin Huaxiang
Harness & Dickey & Pierce P.L.C.
Kusumakar Karen M
Lebentritt Michael S
Samsung Electronics Co,. Ltd.
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