Transistor including bulb-type recess channel and method for...

Details Transistor including bulb-type recess channel and method for... Transistor including bulb-type recess channel and method for...

2007-06-29

2011-11-01

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S271000, C257SE21384, C257SE21419

Reexamination Certificate

active

08048742

ABSTRACT:
A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.

REFERENCES:
patent: 7432155 (2008-10-01), Park
patent: 2006/0289931 (2006-12-01), Kim et al.
patent: 2007/0077713 (2007-04-01), Ha et al.
patent: 10-2000-0060693 (2000-10-01), None
patent: 10-2002-0055938 (2002-07-01), None
patent: 10-2006-0023308 (2006-03-01), None
patent: 10-2006-0058959 (2006-06-01), None

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