Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-26
2011-04-26
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S330000
Reexamination Certificate
active
07932142
ABSTRACT:
A semiconductor device includes a substrate; a first insulating layer provided on the substrate; a conductive layer buried in the first insulating layer; a semiconductor pillar including a lower diffusion layer provided immediately above the conductive layer, the lower diffusion layer being electrically connected to the conductive layer, a semiconductor layer on the lower diffusion layer, and an upper diffusion layer on the semiconductor layer; a gate insulating film provided on a peripheral side surface of the semiconductor layer; a gate electrode provided on the gate insulating film; and a second insulating layer provided such that the gate electrode and a circumference of the semiconductor pillar are buried in the second insulating layer.
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Elpida Memory Inc.
Foley & Lardner LLP
Ida Geoffrey
Le Thao X
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