Transistor having V-shaped embedded stressor

Details Transistor having V-shaped embedded stressor Transistor having V-shaped embedded stressor

2011-08-02

2011-08-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S222000, C438S285000, C438S429000, C257SE21430, C257SE21409

Reexamination Certificate

active

07989298

ABSTRACT:
A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions.

REFERENCES:
patent: 7485524 (2009-02-01), Luo et al.
patent: 2009/0039390 (2009-02-01), Murthy et al.
patent: 2009/0152590 (2009-06-01), Adam et al.
patent: 2010/0093147 (2010-04-01), Liao et al.
patent: 2010/0109044 (2010-05-01), Tekleab et al.
patent: 2010/0117159 (2010-05-01), Lindsay
patent: 2011/0031503 (2011-02-01), Doris et al.

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