Transistor gate conductor having sidewall surfaces upon which a

Details Transistor gate conductor having sidewall surfaces upon which a Transistor gate conductor having sidewall surfaces upon which a

1997-11-21

2000-04-18

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257283, 438230, 438265, 438303, 438595, H01L 2976

Patent

active

060518634

ABSTRACT:
A method is provided for fabricating a transistor gate conductor having opposed sidewall surfaces upon which dielectric spacers are formed such that the spacer profile substantially tapers toward the adjacent gate conductor sidewall surface as it approaches the base of the gate conductor. More particularly, formation of the sidewall spacers involves anisotropically etching a dielectric material deposited across a semiconductor topography in the presence of a passivant source to form a passivant upon portions of the dielectric material. The passivant primarily accumulates upon the upper portion of lateral surfaces of the dielectric material. An isotropic etch which occurs at the same rate in all directions is used to etch portions of the dielectric material not completely covered by the passivant. The resulting spacers have a varying thickness which decreases from top to bottom. Thus, when a silicide-forming metal is deposited, the metal accumulates at the peak of each spacer and is inhibited from being deposited upon the lower portions of the spacers, thereby preventing silicide bridging between the gate conductor and ensuing source/drain regions of the transistor.

REFERENCES:
patent: 5517045 (1996-05-01), Ho et al.
patent: 5818092 (1998-10-01), Bai et al.

Affiliated with

Also associated with

Rating

Transistor gate conductor having sidewall surfaces upon which a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor gate conductor having sidewall surfaces upon which a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor gate conductor having sidewall surfaces upon which a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2338051