Transistor device with two planar gates and fabrication process

Details Transistor device with two planar gates and fabrication process Transistor device with two planar gates and fabrication process

2011-08-09

2011-08-09

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C438S268000, C257SE21621, C257SE21625, C257SE21629, C257SE21633, C257SE21635

Reexamination Certificate

active

07994008

ABSTRACT:
A planar transistor device includes two independent gates (a first and second gates) along with a semiconductor channel lying between the gates. The semiconductor channel is formed of a first material. The channel includes opposed ends comprising dielectric zone with a channel region positioned between the gates. The dielectric zones comprises an oxide of the first material.

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