Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-20
2008-07-22
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21618, C257SE21633
Reexamination Certificate
active
07402497
ABSTRACT:
By removing a portion of a halo region or by avoiding the formation of the halo region within the extension region, which may be subsequently formed on the basis of a re-grown semiconductor material, the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.
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Search Report and Written Opinion Dated Aug. 2, 2007 for Serial No. PCT/US2007/004544.
Hoentschel Jan
Horstmann Manfred
Kammler Thorsten
Wei Andy
Advanced Micro Devices , Inc.
Dang Trung
Williams Morgan & Amerson P.C.
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