Transistor device containing carbon doped silicon in a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S300000, C438S305000, C257SE21092

Reexamination Certificate

active

10877154

ABSTRACT:
A method (100) of forming a transistor includes forming a gate structure (106, 108) over a semiconductor body and forming recesses (112) substantially aligned to the gate structure in the semiconductor body. Carbon-doped silicon is then epitaxially grown (114) in the recesses, followed by forming sidewall spacers (118) over lateral edges of the gate structure. The method continues by implanting source and drain regions in the semiconductor body (120) after forming the sidewall spacers. The carbon-doped silicon formed in the recesses resides close to the transistor channel and serves to provide a tensile stress to the channel, thereby facilitating improved carrier mobility in NMOS type transistor devices.

REFERENCES:
patent: 6358806 (2002-03-01), Puchner
patent: 6368931 (2002-04-01), Kuhn et al.
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6563152 (2003-05-01), Roberds et al.
patent: 6583015 (2003-06-01), Fitzgerald et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6638802 (2003-10-01), Hwang et al.
patent: 2002/0033511 (2002-03-01), Babcock et al.
patent: 2004/0007715 (2004-01-01), Webb et al.
patent: 2005/0079692 (2005-04-01), Samoilov et al.
“Strained Si NMOSFETs for High Performance CMOS Technology”, K. Rim, S. Koester, M. Hargrove, J. Chu, P.M. Mooney, J Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill and H.-S. P. Wong, 2001 Symposium on VLSI Technology Digest of Technical Papers, 2 pgs.
“Low Field Mobility Characteristics of Sub-100 nm Unstrained and Strained Si MOSFETs”, K. Rim, S. Narasimha, M. Longstreet, A. Mocuta and J. Cai, 2002 IEEE, IEDM, pp. 43-46.
“A Logic Nanotechnology Featuring Strained-Silicon”. Scott E. Thompson, Mark Armstrong, Chis Auth, Steve Cea, Robert Chau, Glenn Glass, Thomas Hoffman, Jason Klaus, Zhiyong Ma, Brian McIntyre, Anand Murthy, Borna Obradovic, Lucian Shifren, Sam Sivakumar, Sunit Tyagi, Tahir Ghani, Kaizad Mistry, Mark Bohr and Youssef El-Mansy, IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 191-193.
“High Concentration Diffusivity and Clustering of Arsenic and Phosphorus in Silicon”, S. Solmi and D. Nobili, Journal of Applied Physics, vol. 83, No. 5, Mar. 1, 1998, pp. 2484-2490.

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