Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S763000, C438S785000, C257S411000
Reexamination Certificate
active
11085334
ABSTRACT:
Methods of forming transistor devices and structures thereof are disclosed. A first dielectric material is formed over a workpiece, and a second dielectric material is formed over the first dielectric material. The workpiece is annealed, causing a portion of the second dielectric material to combine with the first dielectric material and form a third dielectric material. The second dielectric material is removed, and a gate material is formed over the third dielectric material. The gate material and the third dielectric material are patterned to form at least one transistor.
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Infineon - Technologies AG
Parker John M.
Slater & Matsil L.L.P.
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