Transistor device and method for manufacturing the same

Details Transistor device and method for manufacturing the same Transistor device and method for manufacturing the same

2006-12-22

2008-09-23

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S586000, C438S257000, C438S291000, C257S330000, C257S192000, C257S413000, C257S396000, C257SE29156

Reexamination Certificate

active

07427546

ABSTRACT:
A transistor device includes a recess in a surface of semiconductor substrate, a gate insulation layer formed over an inner side of the recess, a gate conductor filling the recess in which the gate insulation layer is formed, and source and drain regions located over the substrate adjacent the recess. Among the advantages: the gate structure lowers overall gate resistance and reduces the short channel effect.

REFERENCES:
patent: 6303448 (2001-10-01), Chang et al.
patent: 6780732 (2004-08-01), Durcan et al.
patent: 1020000017149 (2000-03-01), None
patent: 2001-0080432 (2001-08-01), None

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