Transistor device and method for manufacturing the same

Details Transistor device and method for manufacturing the same Transistor device and method for manufacturing the same

2008-09-23

2008-09-23

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S586000, C438S257000, C438S291000, C257S330000, C257S192000, C257S413000, C257S396000, C257SE29156

Reexamination Certificate

active

11615804

ABSTRACT:
A transistor device includes a recess in a surface of semiconductor substrate, a gate insulation layer formed over an inner side of the recess, a gate conductor filling the recess in which the gate insulation layer is formed, and source and drain regions located over the substrate adjacent the recess. Among the advantages: the gate structure lowers overall gate resistance and reduces the short channel effect.

REFERENCES:
patent: 6303448 (2001-10-01), Chang et al.
patent: 6780732 (2004-08-01), Durcan et al.
patent: 1020000017149 (2000-03-01), None
patent: 2001-0080432 (2001-08-01), None

Affiliated with

Also associated with

Rating

Transistor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3923453