Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2005-08-19
2009-10-13
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257S064000, C257S217000, C257SE21431, C257SE29004
Reexamination Certificate
active
07601983
ABSTRACT:
A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a third surface of a {111} crystal plane connecting the first surface to the second surface. First heavily doped impurity regions are formed under the second surface. A gate structure is formed on the first surface. An epitaxial layer is formed on the second surface and the third surface. Second heavily doped impurity regions are formed at both sides of the gate structure. The second heavily doped impurity regions have side faces of the {111} crystal plane so that a short channel effect generated between the impurity regions may be prevented.
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Chinese Office Action dated Apr. 10, 2009 issued in corresponding Chinese Patent Application No. 200510119980.8.
Lee Ho
Lee Seung-Hwan
Rhee Hwa-Sung
Shin Dong-Suk
Ueno Tetsuji
Estrada Michelle
Jefferson Quovaunda
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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