Transistor and method of manufacturing the same

Details Transistor and method of manufacturing the same Transistor and method of manufacturing the same

2011-07-05

2011-07-05

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C438S053000, C257S401000, C257S419000, C977S762000

Reexamination Certificate

active

07972930

ABSTRACT:
In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.

REFERENCES:
patent: 7709827 (2010-05-01), Graham et al.
patent: 7714386 (2010-05-01), Pesetski et al.
patent: 2005/0136585 (2005-06-01), Chau et al.

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