Transistor and method of fabricating the same

Details Transistor and method of fabricating the same Transistor and method of fabricating the same

2008-09-05

2011-11-01

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S284000, C438S300000, C257S287000, C257S344000

Reexamination Certificate

active

08048745

ABSTRACT:
Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device can include a transistor structure including a gate electrode and a first channel region and source/drain regions on a substrate, and a second channel region and source/drain regions provided on the transistor structure. Accordingly, transistor operations can utilize the current path above and below the gate electrode.

REFERENCES:
patent: 5578513 (1996-11-01), Maegawa
patent: 5965919 (1999-10-01), Yoo
patent: 7354831 (2008-04-01), Orlowski
patent: 10-0321757 (2002-01-01), None
patent: 10-2006-0069561 (2006-06-01), None
English Machine translation of Korean Patent KR-10-0321757 assigned to KIm dated :Jan. 10, 2002 ( 10 pages ).

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