Transistor and method for operating the same

Details Transistor and method for operating the same Transistor and method for operating the same

2006-06-27

2011-12-13

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29249

Reexamination Certificate

active

08076698

ABSTRACT:
In a transistor, an AlN buffer layer102, an undoped GaN layer103, an undoped AlGaN layer104, a p-type control layer105, and a p-type contact layer106are formed in this order on a sapphire substrate101. The transistor further includes a gate electrode110in ohmic contact with the p-type contact layer106, and a source electrode108and a drain electrode109provided on the undoped AlGaN layer104. By applying a positive voltage to the p-type control layer105, holes are injected into a channel to increase a current flowing in the channel.

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