Transistor and method for manufacturing thereof

Details Transistor and method for manufacturing thereof Transistor and method for manufacturing thereof

2005-12-14

2009-08-04

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S305000, C257SE21433

Reexamination Certificate

active

07569444

ABSTRACT:
A transistor includes a gate insulating layer over a semiconductor substrate; a first insulating layer on both sides of the gate insulating layer; first spacers over the first insulating layer and being spaced apart from each other; and a gate conductive plug between the first spacers. A method for manufacturing a transistor includes sequentially depositing a first insulating layer and a second insulating layer over a semiconductor substrate; etching the second insulating layer; implanting impurity ions; depositing and etching a layer of spacer material to form first spacers; removing a first portion of the first insulating layer between the first spacers; depositing a gate insulating layer the place of the first portion of the first insulating layer; forming a gate conductive plug on the gate insulating layer; forming second spacers on sidewalls of the gate conductive plug; and forming a silicide on an upper surface of the gate conductive plug.

REFERENCES:
patent: 5668021 (1997-09-01), Subramanian et al.
patent: 5747381 (1998-05-01), Wu et al.
patent: 5856226 (1999-01-01), Wu
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6461904 (2002-10-01), Jin et al.
patent: 2004/0157383 (2004-08-01), Park

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