Transistor and method for manufacturing the same

Details Transistor and method for manufacturing the same Transistor and method for manufacturing the same

2007-07-17

2007-07-17

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S251000, C438S254000

Reexamination Certificate

active

11039746

ABSTRACT:
A transistor including a semiconductor substrate defined with an active region and a device isolation region, a gate formed on the semiconductor substrate, an insulating spacers formed on respective side walls of the gate, and source/drain junctions formed in the semiconductor substrate at opposite sides of the gate, the source/drain junctions having asymmetrical junction structures, respectively, wherein the gate has a lower portion arranged on the active region of the substrate, the lower gate portion having a stepped profile having a lower surface, an upper surface and a vertically-extending side surface. The invention also provides a method for manufacturing this transistor. In accordance with this transistor structure, an increase in the dopant concentration of a storage node is prevented. Accordingly, a reduction in the amount of leakage current is achieved, so that an improvement in the refresh characteristics of the transistor is achieved.

REFERENCES:
patent: 5955760 (1999-09-01), Kao et al.
patent: 6790724 (2004-09-01), Chin et al.
patent: 7045846 (2006-05-01), Jang et al.
patent: 7102187 (2006-09-01), Yoo

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